SIC silicon carbide

SIC Silicon Carbide

Silicon carbide is characterized by high mechanical characteristics (hardness, modulus of elasticity), which determine the increased performance of materials based on it. The combination of high thermal conductivity and low thermal expansion coefficient, determine the resistance of silicon carbide at high heating rates and in a stationary thermal regime.

Depending on the manufacturing technology, silicon carbide is divided into:

  1. Reaction-sintered silicon carbide ( SIC /Q 2 ) - which is obtained by the compaction and strengthening process, those. when exposed to high temperatures, a porous billet of a mixture of carbide-silicon and carbon materials is impregnated with a liquid reagent – molten silicon, with the formation of secondary silicon carbide, which binds the original components in a dense material.
  2. Hot-pressed-Sintered Silicon Carbide ( SSIC /Q 1 ) - is obtained by pre-grinding the mixture of silicon with graphite, and sintering compacts in argon for 15 minutes. This results in silicon carbide materials with a pore size of 0.2 microns. Its subtype is also solid silicon carbide, sintered without pressure (SSIC), which is currently most applicable to concentrated alkaline acid media.
Parameters Reaction-sintered
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Hot-pressed-sintered
Type SIC (Q 2 )
SSIC (Q 1 )

SiC content. %    

> = 90 > = 98

Density g /cm 3

3.05 3.1

Flexural strength , MPa

4.41 x 10 2 4.9 x 10 2

Tensile strength, MPa

2.75 x 10 2 2.8 x 10 2
Compressive strength, MPa 2.94 x 10 3 3.0 x 10 3

Elastic modulus, MPa

4.12 x 10 5 4.10 x 10 5

Shore hardness, HS

110-125 120-130

Heat conductivity, W /m.k

141 147

Coefficient of temperature linear   expansion at 20

4.3 x 10 -6 4.0 x 10 -6

Working temperature limit, ord С

1600 1650